features ? very low noise figure: 0.45 db typical at 12 ghz ? high associated gain: 12.5 db typical at 12 ghz ?l g 0.20 m m, w g = 200 m m ? low cost metal ceramic package ? tape & reel packaging option available ultra low noise pseudomorphic hj fet NE32584c description the NE32584c is a pseudomorphic hetero-junction fet that uses the junction between si-doped algaas and undoped ingaas to create very high mobility electrons. the device features mushroom shaped tial gates for decreased gate resistance and improved power handling capabilities. the mushroom gate also results in lower noise figure and high associated gain. this device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume con- sumer and industrial applications. nec's stringent quality assurance and test procedures assure the highest reliability and performance. part number NE32584c package outline 84c symbols parameters and conditions units min typ max nf 1 optimum noise figure, v ds = 2 v, i ds = 10 ma, f = 12 ghz db 0.45 0.55 g a 1 associated gain, v ds = 2 v, i ds = 10 ma, f = 12 ghz db 11.0 12.5 i dss saturated drain current, v ds = 2 v,v gs = 0 v ma 20 60 90 v p pinch-off voltage, v ds = 2 v, i ds = 100 m a v -2.0 -0.7 -0.2 g m transconductance, v ds = 2 v, i d = 10 ma ms 45 60 i gso gate to source leakage current, v gs = -3 v m a 0.5 10.0 r th (ch-a) thermal resistance (channel to ambient) c/w 750 r th (ch-c) thermal resistance (channel to case) c/w 350 associated gain, g a (db) noise figure, nf (db) noise figure & associated gain vs. frequency v ds = 2 v, i ds = 10 ma electrical characteristics (t a = 25 c) note: 1. typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots w ere individually measured in a circuit with the input individually tuned to obtain the minimum value. maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not each specimen. frequency, f (ghz) california eastern laboratories g a nf 1.2 1.0 0.8 0.6 0.4 0.2 0 2 4 6 8 10 20 30 24 21 18 15 12 9 6
NE32584c absolute maximum ratings 1 (t a = 25 c) typical noise parameters (t a = 25 c) v ds = 2 v, i d = 10 ma symbols parameters units ratings v ds drain to source voltage v 4.0 v gs gate to source voltage v -3.0 i ds drain current ma i dss i grf gate current m a 100 t ch channel temperature c 150 t stg storage temperature c -65 to +150 p t total power dissipation mw 165 total power dissipation vs. ambient temperature ambient temperature, t a ( c) total power dissipation, p t (mw) noise figure, nf (db) typical performance curves (t a = 25 c) note: 1. operation in excess of any one of these parameters may result in permanent damage. noise figure, nf (db) freq. nf opt g a g opt (ghz) (db) (db) mag ang rn/50 2 0.29 20.0 0.86 22 0.27 4 0.30 18.3 0.76 45 0.25 6 0.33 16.5 0.69 70 0.18 8 0.36 15.0 0.63 96 0.11 10 0.40 13.6 0.59 122 0.08 12 0.45 12.5 0.54 147 0.04 14 0.54 12.0 0.48 171 0.04 16 0.68 11.8 0.40 -165 0.05 18 0.85 11.5 0.31 -144 0.06 associated gain, g a (db) associated gain, g a (db) drain current, i d (ma) noise figure and associated gain vs. frequency drain current, i d (ma) frequency, f (ghz) noise figure and associated gain vs. drain current drain current vs. drain to source voltage drain to source voltage, v ds (v) 200 150 100 50 0 50 100 150 200 v gs = 0 v -0.2 v -0.4 v -0.8 v -0.6 v 100 80 60 40 20 0 1.5 3.0 1.0 0.5 0 12 468 10 14 20 30 24 20 16 12 8 4 g a nf v ds = 2 v i d = 10 ma v ds = 2 v f = 12 ghz g a nf 2.0 1.5 1.0 0.5 0 10 20 30 14 13 12 11 10
typical common source scattering parameters (t a = 25 c) NE32584c v ds = 2 v, i ds = 10 ma frequency s 11 s 21 s 12 s 22 k mag (ghz) mag ang mag ang mag ang mag ang (db) 0.100 1.001 -1.75 5.202 178.07 0.001 83.90 0.587 -1.59 -0.075 37.162 0.200 1.001 -3.60 5.189 176.33 0.003 86.02 0.585 -3.13 -0.025 32.380 0.500 0.998 -8.95 5.178 170.78 0.008 83.30 0.585 -7.50 0.047 28.111 1.000 0.989 -17.72 5.128 161.98 0.015 76.85 0.581 -14.91 0.118 25.339 2.000 0.967 -34.63 5.013 145.12 0.030 64.62 0.576 -28.90 0.188 22.230 3.000 0.943 -50.81 4.865 128.82 0.043 53.33 0.567 -42.28 0.235 20.536 4.000 0.907 -66.71 4.703 112.71 0.054 42.06 0.554 -55.03 0.312 19.400 5.000 0.857 -81.86 4.493 97.04 0.062 31.40 0.531 -66.77 0.426 18.601 6.000 0.800 -96.39 4.297 82.71 0.069 21.97 0.503 -77.55 0.541 17.943 7.000 0.755 -110.25 4.143 69.20 0.075 13.52 0.483 -87.72 0.618 17.423 8.000 0.725 -124.55 4.068 55.99 0.081 5.09 0.470 -97.81 0.646 17.009 9.000 0.683 -138.37 3.994 42.58 0.084 -3.80 0.453 -106.93 0.724 16.771 10.000 0.663 -154.60 4.017 28.11 0.089 -12.63 0.431 -116.85 0.734 16.545 11.500 0.585 178.24 3.849 6.85 0.091 -26.79 0.359 -134.35 0.900 16.263 12.000 0.565 168.24 3.790 -0.46 0.090 -31.63 0.335 -140.87 0.960 16.244 13.000 0.551 148.32 3.720 -13.97 0.090 -41.14 0.300 -157.16 1.000 16.163 14.000 0.548 129.66 3.669 -28.93 0.089 -52.52 0.281 -173.11 1.029 15.113 15.000 0.560 112.17 3.652 -44.37 0.087 -64.18 0.276 171.08 1.025 15.253 16.000 0.565 94.50 3.557 -60.11 0.085 -76.05 0.274 154.07 1.052 14.824 17.000 0.565 76.97 3.448 -74.93 0.084 -89.05 0.259 135.78 1.101 14.196 18.000 0.575 60.33 3.357 -89.44 0.082 -103.35 0.263 116.62 1.120 14.012 note: 1. gain calculation: mag = maximum available gain msg = maximum stable gain coordinates in ohms frequency in ghz (v ds = 2 v, i ds = 10 ma) NE32584c mag = |s 21 | |s 12 | k - 1 ). 2 ( k d = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | d | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , 0 10 25 50 j 10 j 25 j 50 j 100 -j 10 -j 25 -j 50 -j 100 s 11 .1 ghz s 22 20 ghz s 22 .1 ghz s 11 20 ghz 100 5 4 3 2 1 .1 . 06 +120? +150? 180? +90? +60? +30? -120? -150? -90? -60? -30? 0? s 12 .1 ghz s 21 .1 ghz s 12 20 ghz s 21 20 ghz
NE32584c typical common source scattering parameters (t a = 25 c) frequency s 11 s 21 s 12 s 22 k mag (ghz) mag ang mag ang mag ang mag ang (db) NE32584c v ds = 2 v, i ds = 20 ma note: 1. gain calculation: mag = maximum available gain msg = maximum stable gain coordinates in ohms frequency in ghz (v ds = 2 v, i ds = 20 ma) 0.100 1.001 -1.81 6.552 178.03 0.001 84.76 0.509 -1.76 -0.078 38.164 0.200 1.000 -3.77 6.531 176.09 0.003 86.79 0.507 -3.19 0.011 33.379 0.500 0.997 -9.43 6.511 170.33 0.007 83.69 0.506 -7.53 0.063 29.685 1.000 0.987 -18.65 6.432 161.14 0.014 77.38 0.502 -14.91 0.134 26.622 2.000 0.958 -36.35 6.243 143.49 0.027 65.71 0.496 -28.84 0.232 23.640 3.000 0.925 -53.13 5.999 126.61 0.038 55.04 0.487 -41.96 0.303 21.983 4.000 0.879 -69.42 5.734 110.09 0.048 44.64 0.474 -54.20 0.397 20.772 5.000 0.821 -84.79 5.417 94.24 0.056 34.90 0.454 -65.25 0.519 19.856 6.000 0.757 -99.35 5.121 79.85 0.062 26.33 0.430 -75.31 0.646 19.170 7.000 0.708 -113.22 4.892 66.26 0.068 18.60 0.413 -84.85 0.723 18.570 8.000 0.674 -127.54 4.754 53.02 0.074 10.86 0.401 -94.21 0.754 18.078 9.000 0.628 -141.15 4.617 39.77 0.078 2.80 0.389 -102.27 0.826 17.723 10.000 0.605 -157.21 4.599 25.65 0.083 -5.30 0.370 -111.19 0.836 17.436 11.000 0.549 -174.62 4.503 11.83 0.086 -14.51 0.330 -121.08 0.927 17.190 12.000 0.513 165.35 4.291 -2.24 0.087 -23.36 0.283 -133.16 1.017 16.128 13.000 0.504 145.18 4.193 -15.42 0.087 -32.46 0.248 -149.27 1.052 15.439 14.000 0.504 126.44 4.123 -29.96 0.088 -43.35 0.229 -165.01 1.061 15.202 15.000 0.517 109.11 4.106 -45.03 0.087 -54.72 0.225 179.28 1.050 15.376 16.000 0.527 91.65 4.001 -60.55 0.086 -66.36 0.224 161.59 1.058 15.203 17.000 0.530 74.05 3.888 -75.22 0.085 -79.11 0.208 142.58 1.098 14.697 18.000 0.543 57.36 3.785 -89.66 0.083 -93.10 0.212 121.91 1.114 14.536 mag = |s 21 | |s 12 | k - 1 ). 2 ( k d = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | d | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , 0 10 25 50 j 10 j 25 j 50 j 100 -j 10 -j 25 -j 50 -j 100 s 22 20 ghz s 11 .1 ghz s 22 .1 ghz s 11 20 ghz 100 10 8 6 4 2 .1 . 06 . 02 +120? +150? 180? +90? +60? +30? -120? -150? -90? -60? -30? 0? s 21 .1 ghz s 21 20 ghz s 12 20 ghz s 12 .1 ghz
schematic parameter units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps parameters q1 parameters q1 vto -0.6723 rg 3 vtosc 0 rd 2 alpha 4 rs 2 beta 0.115 rgmet 0 gamma 0.08 kf 0 gammadc 0.07 af 1 q 2 tnom 27 delta 0.5 xti 3 vbi 0.715 eg 1.43 is 3e-13 vtotc 0 n 1.22 betatce 0 ris 0 ffe 1 rid 0 tau 5e-12 cds 0.13e-12 rdb 1000 cbs 1e-9 cgso 0.3e-12 cgdo 0.02e-12 delta1 0.3 delta2 0.1 fc 0.5 vbr infinity NE32584c nonlinear model NE32584c fet nonlinear model parameters (1) units model range frequency: 0.1 to 18 ghz bias: v ds = 1 v to 3 v, i d = 5 ma to 30 ma date: 3/24/97 (1) series iv libra tom model cgd_pkg rg_pkg 0.5 ohms 0.28nh 0.55nh lg_pkg ccg_pkg rs_pkg 0.2 ohms ls_pkg 0.095nh 0.1pf csg_pkg 0.01pf source 0.14pf lg q1 ld ld_pkg rd_pkg ccd_pkg csd_pkg 0.01pf drain 0.4nh 0.3nh 0.2 ohms 0.001pf gate
outline dimensions (units in mm) package outline 84c NE32584c part availability lead package number length outline NE32584c-s bulk up to 1k 1.0 mm 84c NE32584c-t1 1k/reel 1.0 mm 84c ordering information 1.78 0.2 0.5 0.1 (all leads ) 1.0 0.2 (all leads) 1.78 0.2 1.7 max 0.1 +0.07 -0.03 s s d g part number designator (letter). when the letter is upright, the gate lead is to the right. d exclusive north american agent for rf, microwave & optoelectronic semiconductors california eastern laboratories ?headquarters ?4590 patrick henry drive ?santa clara, ca 95054-1817 ?(408) 988-3500 ?telex 34-6393 ?fax (408) 988-0279 24-hour fax-on-demand: 800-390-3232 (u.s. and canada only) ?internet: http://www.cel.com printed in usa on recycled paper -12/98 data subject to change without notice
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